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| N-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218 PowerMeshTM MOSFET TYPE STW8NB90 STH8NB90FI s s s s s STW8NB90 STH8NB90FI VDSS 900 V 900 V RDS(on) < 1.45 < 1.45 ID 8A 5A TYPICAL RDS(on) = 1.1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 3 2 1 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature ISOWATT218 INTERNAL SCHEMATIC DIAGRAM Value STW8NB90 900 900 30 8 5 32 200 1.6 4 -65 to 150 150 2500 5 3 20 80 0.64 STH8NB90FI Unit V V V A A A W W/C V/ns V C C (*)Pulse width limited by safe operating area (1)ISD 8 A, di/dt 200A/s, VDD V(BR)DSS, T j TJMAX. July 2001 1/9 STW8NB90 - STH8NB90FI THERMAL DATA TO-247 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.625 30 300 ISOWATT218 1.56 C/W C/W C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 8 700 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 30V Min. 900 1 50 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250 A VGS = 10 V, ID = 4 A Min. 3 Typ. 4 1.1 Max. 5 1.45 Unit V DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 4 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 8 2120 225 23 Max. Unit S pF pF pF 2/9 STW8NB90 - STH8NB90FI ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 450 V, ID = 3.5 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) VDD = 400V, ID = 9A, VGS = 10V Min. Typ. 25 12 46 12.5 18 72 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 720V, ID = 7.4 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 22 15 31 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 8 A, VGS = 0 ISD = 7.4 A, di/dt = 100A/s, VDD = 100V, Tj = 150C (see test circuit, Figure 5) 700 6.3 18 Test Conditions Min. Typ. Max. 8 32 1.6 Unit A A V ns C A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for TO-247 Safe Operating Area for ISOWATT218 3/9 STW8NB90 - STH8NB90FI Thermal Impedence for TO-247 Thermal Impedence for ISOWATT218 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9 STW8NB90 - STH8NB90FI Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STW8NB90 - STH8NB90FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STW8NB90 - STH8NB90FI TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M 2 15.3 19.7 14.2 34.6 5.5 3 0.079 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 7/9 STW8NB90 - STH8NB90FI ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA mm TYP. inch TYP. MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 21.20 19.90 23.60 42.50 5.25 20.75 2.3 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 0.819 0.752 0.898 1.594 0.191 0.797 0.083 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.835 0.783 0.929 1.673 0.207 0.817 0.091 9 0.354 4.6 3.5 3.7 0.138 0.181 0.146 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 m P025C/A 8/9 STW8NB90 - STH8NB90FI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9 |
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